IRFZ24NPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 17 A, 0.07 OHM, TO-220AB, THROUGH HOLE

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 17 A, 0.07 OHM, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ24NPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id
Infineon Technologies IRFZ24NPBF	10 V	370 pF	17 A	MOSFET (Metal Oxide)	N-Channel	20 V	70 mOhm	Through Hole	TO-220AB	-55 °C	175 ░C	20 nC	45 W	55 V	TO-220-3	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly