ISC058N04NM5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 5.8 MOHM;
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ISC058N04NM5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 5.8 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISC058N04NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A, 63 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 42 W, 3 W |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm |
| Supplier Device Package | PG-TDSON-8 FL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ISC058N Series
With the OptiMOSTM5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vthin the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Documents
Technical documentation and resources