NCP5181DR2G
ObsoleteMOSFET / IGBT DRIVERS, HIGH VOLTAGE, HIGH AND LOW SIDE, DUAL INPUT
NCP5181DR2G
ObsoleteMOSFET / IGBT DRIVERS, HIGH VOLTAGE, HIGH AND LOW SIDE, DUAL INPUT
Description
General part information
NCP5181DR2G
The NCP5181 is a High Voltage Power Mosfet Driver providing two outputs for direct drive of a 2 N-channel power Mosfets arranged in a half-bridge (or any other high side + low side configuration).It uses the bootstrap technique to insure a proper drive of the High side power switch. The driver works with 2 independent inputs to accomodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full bridge).
Technical Specifications
Parameters and characteristics for this part
| Specification | NCP5181DR2G |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 2.2 A |
| Current - Peak Output (Source) | 1.4 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 20 ns |
| Gate Channel | N-Channel |
| Gate Type | MOSFET |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.3 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 40 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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