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BSS123W-7-F - Package Image for SOT323

BSS123W-7-F

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 170 MA, 6 OHM, SOT-323, 3 PINS, SURFACE MOUNT

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BSS123W-7-F - Package Image for SOT323

BSS123W-7-F

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 170 MA, 6 OHM, SOT-323, 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS123W-7-F
Current - Continuous Drain (Id) @ 25°C170 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds60 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)200 mW
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.26
100$ 0.13
500$ 0.11
1000$ 0.08
Digi-Reel® 1$ 0.38
10$ 0.26
100$ 0.13
500$ 0.11
1000$ 0.08
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.04
NewarkEach (Supplied on Cut Tape) 1$ 0.35
10$ 0.23
25$ 0.18
50$ 0.14
100$ 0.10
250$ 0.10
500$ 0.10
1000$ 0.10

Description

General part information

BSS123Q Series

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.