DJT4031N-13

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

Technical Specifications

Parameters and characteristics for this part

Specification	DJT4031N-13

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	105 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

NPN, 40V, 3A, SOT223

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type
Diodes Inc DJT4031N-13	105 MHz	300 mV	200 hFE	1.2 W	TO-261-4 TO-261AA	SOT-223-3	40 V	100 nA	-55 °C	150 °C	NPN	3 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 40V, 3A, SOT223

Technical documentation and resources