BD677A

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STMicroelectronics

NPN POWER DARLINGTON TRANSISTOR

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STMicroelectronics

NPN POWER DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BD677A	BD677A Series

	-	-
Current - Collector (Ic) (Max) [Max]	4 A	4 A
Current - Collector Cutoff (Max) [Max]	500 çA	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750	750
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Power - Max [Max]	40 W	40 W
Supplier Device Package	SOT-32-3	SOT-32-3
Vce Saturation (Max) @ Ib, Ic [Max]	2.8 V	2.8 V
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

NPN power Darlington transistor

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]
STMicroelectronics BD677A	Through Hole	750	SOT-32-3	500 çA	150 °C	4 A	TO-126-3, TO-225AA	60 V	40 W	2.8 V
STMicroelectronics BD677A

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources