SUM47N10-24L-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 47A TO263

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 47A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM47N10-24L-E3

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 136 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Vishay General Semiconductor - Diodes Division SUM47N10-24L-E3	3 V	N-Channel	4.5 V 10 V	2400 pF	100 V	Surface Mount	MOSFET (Metal Oxide)	47 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.75 W 136 W	60 nC	-55 °C	175 ░C	20 V	24 mOhm	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 47A (Tc) 3.75W (Ta), 136W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available