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FDMC86183

FDMC86183

Obsolete
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 47 A, 12.8 MΩ

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FDMC86183

FDMC86183

Obsolete
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 47 A, 12.8 MΩ

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Description

General part information

FDMC86183

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86183
Current - Continuous Drain (Id) (Tc)47 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)1515 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerWDFN
Package Length3.3 mm
Package NamePower33, 8-PQFN
Package Width3.3 mm
Power Dissipation (Max)52 W
Rds On (Max)12.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part