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NVD5C446NT4G

NVD5C446NT4G

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 101A, 3.5MΩ

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NVD5C446NT4G

NVD5C446NT4G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 40V, 101A, 3.5MΩ

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Description

General part information

NVD5C446NT4G

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVD5C446NT4G
Current - Continuous Drain (Id) (Ta)22 A
Current - Continuous Drain (Id) (Tc)105 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)34.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2300 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)66 W, 3.1 W
QualificationAEC-Q101
Rds On (Max)3.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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