STW30NM50N

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STMicroelectronics

MOSFET N-CH 500V 27A TO247-3

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STMicroelectronics

MOSFET N-CH 500V 27A TO247-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW30NM50N	STW30N Series

Current - Continuous Drain (Id) @ 25°C	27 A	25 - 30 A
Drain to Source Voltage (Vdss)	500 V	200 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC	94 nC
Gate Charge (Qg) (Max) @ Vgs	-	91 nC
Gate Charge (Qg) (Max) @ Vgs	-	38 - 100 nC
Input Capacitance (Ciss) (Max) @ Vds	2740 pF	2700 - 2740 pF
Input Capacitance (Ciss) (Max) @ Vds	-	1597 - 2800 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	125 W
Power Dissipation (Max) [Max]	190 W	190 W
Rds On (Max) @ Id, Vgs	115 mOhm	75 - 115 mOhm
Rds On (Max) @ Id, Vgs	-	130 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	20 - 30 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

MOSFET N-CH 600V 25A TO247-3

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
STMicroelectronics STW30NM60N	600 V	91 nC	10 V	TO-247-3	25 A	130 mOhm	4 V	Through Hole	30 V	TO-247-3	N-Channel	2700 pF	190 W	150 °C	MOSFET (Metal Oxide)
STMicroelectronics STW30NM50N	500 V		10 V	TO-247-3	27 A		4 V	Through Hole	25 V	TO-247-3	N-Channel	2740 pF	190 W	150 °C	MOSFET (Metal Oxide)	115 mOhm	94 nC
STMicroelectronics STW30NM60ND	600 V		10 V	TO-247-3	25 A	130 mOhm	5 V	Through Hole	25 V	TO-247-3	N-Channel		190 W	150 °C	MOSFET (Metal Oxide)			100 nC	2800 pF
STMicroelectronics STW30N20	200 V			TO-247-3	30 A		4 V	Through Hole		TO-247-3	N-Channel				MOSFET (Metal Oxide)	75 mOhm		38 nC	1597 pF	-55 °C	150 °C	125 W
STMicroelectronics STW30NF20	200 V		10 V	TO-247-3	30 A		4 V	Through Hole	20 V	TO-247-3	N-Channel				MOSFET (Metal Oxide)	75 mOhm		38 nC	1597 pF	-55 °C	150 °C	125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 27A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources