QEB363YR
ActiveON Semiconductor
LAMP,IRED,940NM PEAK WAVELENGTH,LED-8D ROHS COMPLIANT: YES
QEB363YR
ActiveON Semiconductor
LAMP,IRED,940NM PEAK WAVELENGTH,LED-8D ROHS COMPLIANT: YES
Description
General part information
QEB363YR
The QEB363 is a 940nm GaAs LED encapsulated in clear plastic subminiature package. Gullwing, Yoke and Z-bend lead option are available.
Technical Specifications
Parameters and characteristics for this part
| Specification | QEB363YR |
|---|---|
| Current - DC Forward (If) (Max) | 50 mA |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package / Case | 2-SMD, Yoke Bend |
| Radiant Intensity (Ie) Min | 8 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 24 ° |
| Voltage - Forward (Vf) (Max) | 1.6 V |
| Wavelength | 940 nm |
Pricing
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CAD
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Documents
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