MJD42CT4G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 100 V, 3 MHZ, 20 W, 6 A, 30 ROHS COMPLIANT: YES
MJD42CT4G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 100 V, 3 MHZ, 20 W, 6 A, 30 ROHS COMPLIANT: YES
Description
General part information
MJD42CT4G
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD42CT4G |
|---|---|
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Cutoff (Max) | 50 µA |
| DC Current Gain (hFE) (Min) | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.75 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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