DMTH3M70LPSW-13
ActiveDiodes Inc
30V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH3M70LPSW-13
ActiveDiodes Inc
30V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH3M70LPSW-13
This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH3M70LPSW-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 61 A |
| Current - Continuous Drain (Id) (Tc) | 150 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 152.7 nC |
| Input Capacitance (Ciss) (Max) | 11112 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UX) |
| Power Dissipation (Max) | 2.13 W |
| Rds On (Max) | 0.55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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