IRFH4253DTRPBF

Infineon Technologies

STRONGIRFET™ N+N DUAL POWER MOSFET 25 V ; POWERSTAGE 5X6 TISON-8 PACKAGE; 1.1 MOHM; SCHOTTKY

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Infineon Technologies

STRONGIRFET™ N+N DUAL POWER MOSFET 25 V ; POWERSTAGE 5X6 TISON-8 PACKAGE; 1.1 MOHM; SCHOTTKY

Technical Specifications

Parameters and characteristics for this part

Specification	IRFH4253DTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	145 A
Current - Continuous Drain (Id) @ 25°C [Min]	64 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1314 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	50 W, 31 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power - Max	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Mounting Type	Package / Case	FET Feature	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRFH4253DTRPBF	-55 °C	150 °C	15 nC	2 N-Channel (Dual)	31 W 50 W	25 V	2.1 V	64 A	145 A	Surface Mount	8-PowerVDFN	Logic Level Gate	MOSFET (Metal Oxide)	3.2 mOhm	PQFN (5x6)	1314 pF

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General part information

Mosfet Array 25V 64A, 145A 31W, 50W Surface Mount PQFN (5x6)

Technical documentation and resources