DMT10H003SPSW-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H003SPSW-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT10H003SPSW-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT10H003SPSW-13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 152 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 85 nC |
| Input Capacitance (Ciss) (Max) | 5542 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type Q) |
| Power Dissipation (Max) | 2.2 W, 139 W |
| Rds On (Max) | 3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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