VN3205N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM
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VN3205N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, 0.3 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN3205N3-G | VN3205 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 1.2 A | 1.2 - 1.5 A |
| Drain to Source Voltage (Vdss) | 50 V | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF | 300 pF |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3, TO-243AA |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs | - | 300 mOhm |
| Rds On (Max) @ Id, Vgs [Max] | 300 mOhm | 300 mOhm |
| Supplier Device Package | TO-92-3 | TO-92-3, TO-243AA (SOT-89) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.67 | |
| 25 | $ 1.38 | |||
| 100 | $ 1.27 | |||
| Microchip Direct | BAG | 1 | $ 1.67 | |
| 25 | $ 1.38 | |||
| 100 | $ 1.27 | |||
| 1000 | $ 1.05 | |||
| 5000 | $ 0.98 | |||
| 10000 | $ 0.90 | |||
VN3205 Series
MOSFET, N-Channel Enhancement-Mode, 50V, 0.3 Ohm
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN3205N3-G-P002 | 4.5 V, 10 V | 50 V | 1 W | TO-92-3 | 300 mOhm | N-Channel | 300 pF | -55 °C | 150 °C | TO-226-3, TO-92-3 | Through Hole | 20 V | 1.2 A | 2.4 V | MOSFET (Metal Oxide) | |
Microchip Technology VN3205N8-G | ||||||||||||||||
Microchip Technology VN3205N3-G | ||||||||||||||||
Microchip Technology VN3205N3-G | 4.5 V, 10 V | 50 V | 1 W | TO-92-3 | 300 mOhm | N-Channel | 300 pF | -55 °C | 150 °C | TO-226-3, TO-92-3 | Through Hole | 20 V | 1.2 A | 2.4 V | MOSFET (Metal Oxide) | |
Microchip Technology VN3205N8-G | 4.5 V, 10 V | 50 V | TO-243AA (SOT-89) | N-Channel | 300 pF | -55 °C | 150 °C | TO-243AA | Surface Mount | 20 V | 1.5 A | 2.4 V | MOSFET (Metal Oxide) | 300 mOhm | ||
Microchip Technology VN3205N8-G |
Description
General part information
VN3205 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.