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TN2501N8-G - C04-029 MB

TN2501N8-G

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Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

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TN2501N8-G - C04-029 MB

TN2501N8-G

Active
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTN2501N8-GTN2501 Series
Current - Continuous Drain (Id) @ 25°C-400 mA
Drain to Source Voltage (Vdss)-18 V
Drive Voltage (Max Rds On, Min Rds On)-1.2 - 3 V
FET Type-N-Channel
Input Capacitance (Ciss) (Max) @ Vds-110 pF
Mounting Type-Surface Mount
null-
Operating Temperature--55 °C
Operating Temperature-150 °C
Package / Case-TO-243AA
Power Dissipation (Max)-1.6 W
Rds On (Max) @ Id, Vgs-2.5 Ohm
Supplier Device Package-TO-243AA (SOT-89)
Technology-MOSFET (Metal Oxide)
Vgs (Max)-20 V
Vgs(th) (Max) @ Id-1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 1.25
NewarkEach (Supplied on Full Reel) 2000$ 1.29

TN2501 Series

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 18V, 2.5 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES

PartMounting TypeDrain to Source Voltage (Vdss)Package / CaseDrive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max)Supplier Device PackageInput Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ IdVgs (Max)Rds On (Max) @ Id, VgsFET TypeCurrent - Continuous Drain (Id) @ 25°COperating Temperature [Min]Operating Temperature [Max]Technology
Microchip Technology
TN2501N8-G
Surface Mount
18 V
TO-243AA
1.2 V, 3 V
1.6 W
TO-243AA (SOT-89)
110 pF
1 V
20 V
2.5 Ohm
N-Channel
400 mA
-55 °C
150 °C
MOSFET (Metal Oxide)
Microchip Technology
TN2501N8-G
Microchip Technology
TN2501N8-G

Description

General part information

TN2501 Series

Low threshold

High input impedance

Low input capacitance (110pF max.)

Documents

Technical documentation and resources