STS20N3LLH6

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STMicroelectronics

MOSFET N-CH 30V 20A 8SO

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STMicroelectronics

MOSFET N-CH 30V 20A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	STS20N3LLH6

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 30V 20A 8SO

Part	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STS20N3LLH6	Surface Mount	20 V	1690 pF	2.7 W	17 nC	MOSFET (Metal Oxide)	4.7 mOhm	8-SOIC	30 V	20 A	-55 °C	150 °C	N-Channel	1 V	8-SOIC	3.9 mm	0.154 in	4.5 V, 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 20A (Tc) 2.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources