STU6N95K5

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STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE

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DocumentsTechnical Data Sheet EN Product Change Notice EN +17

STU6N95K5

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STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE

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DocumentsTechnical Data Sheet EN Product Change Notice EN +17

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU6N95K5

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STU6N95K5 Series

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in an IPAK package

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Mounting Type
STMicroelectronics STU6N95K5	5 V	9 A	950 V	N-Channel	TO-251 (IPAK)	-55 °C	150 °C	1.25 Ohm	MOSFET (Metal Oxide)	450 pF	10 V	IPAK, TO-251-3 Short Leads, TO-251AA	13 nC	90 W	30 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.68
		75	$ 2.15
		150	$ 1.77
		525	$ 1.50
		1050	$ 1.27
		2025	$ 1.21
		5025	$ 1.16
Newark	Each	1	$ 2.59
		10	$ 2.06
		100	$ 1.93
		500	$ 1.86
		1000	$ 1.80
		2500	$ 1.77
		6000	$ 1.76

Description

General part information

STU6N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources

STU6N95K5

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STU6N95K5

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Technical Specifications

STU6N95K5 Series

Pricing

Description

STU6N95K5 Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Datasheet

TN1225

AN4337

DS14438

AN2842

TN1156

AN4250

TN1224

AN2344

TN1378

UM1575

Technical Specifications

STU6N95K5 Series