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NVGS4111PT1G

NVGS4111PT1G

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ON Semiconductor

SINGLE P−CHANNEL POWER MOSFET -30V, -4.7A, 60MΩ

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NVGS4111PT1G

NVGS4111PT1G

Active
ON Semiconductor

SINGLE P−CHANNEL POWER MOSFET -30V, -4.7A, 60MΩ

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Description

General part information

NVGS4111PT1G

Low Profile Package Suitable for Portable Applications

Surface Mount TSOP-6 Saves Board Space

Improved Efficiency for Battery Applications

Technical Specifications

Parameters and characteristics for this part

SpecificationNVGS4111PT1G
Current - Continuous Drain (Id) (Ta)3.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)32 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)750 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package Name6-TSOP
Power Dissipation (Max)630 mW
QualificationAEC-Q101
Rds On (Max)60 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part

    NVGS4111PT1G | ON Semiconductor | Zenode.ai