WNSC401200CWQ

Obsolete

WeEn Semiconductors

DIODE SIL CARB 1.2KV 40A TO247-3

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Obsolete

WeEn Semiconductors

DIODE SIL CARB 1.2KV 40A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC401200CWQ

Capacitance @ Vr, F	810 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

DIODE SIL CARB 1.2KV 40A TO247-3

Part	Mounting Type	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Technology	Speed	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
WeEn Semiconductors WNSC401200CWQ	Through Hole	TO-247-3	40 A	0 ns	810 pF	SiC (Silicon Carbide) Schottky	No Recovery Time	175 °C	TO-247-3	1.2 kV	200 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 40A Through Hole TO-247-3

Technical documentation and resources

No documents available