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NST847BMX2T5G

NST847BMX2T5G

Active
ON Semiconductor

100 MA, 45 V, NPN BIPOLAR TRANSISTOR IN SOT-883

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NST847BMX2T5G

NST847BMX2T5G

Active
ON Semiconductor

100 MA, 45 V, NPN BIPOLAR TRANSISTOR IN SOT-883

Find alt

Description

General part information

NST847BMX2T5G

The NPN Bipolar Transistor is designed for use in amplification and switching applications. The device is housed in the SOT-883 package, which is designed for lower power surface mount applications. Because of its small size, it is suited for use in smartphone, smart−watch, or many other portable/wearable applications where board space comes at a premium.

Technical Specifications

Parameters and characteristics for this part

SpecificationNST847BMX2T5G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)15 nA
DC Current Gain (hFE) (Min)200
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case0402 (1006 Metric)
Package Length1 mm
Package Name3-X2DFN
Package Width0.6 mm
Power - Max225 mW
Transistor TypeNPN
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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