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FDMC8010DC

FDMC8010DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 33 POWERTRENCH<SUP>®</SUP> MOSFET 30V, 157A, 1.28MΩ

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FDMC8010DC

FDMC8010DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 33 POWERTRENCH<SUP>®</SUP> MOSFET 30V, 157A, 1.28MΩ

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Description

General part information

FDMC8010DC

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC8010DC
Current - Continuous Drain (Id) (Ta)37 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)94 nC
Input Capacitance (Ciss) (Max)7080 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerWDFN
Package Length3.3 mm
Package Name8-PQFN
Package Width3.3 mm
Power Dissipation (Max)3 W
Rds On (Max)1.28 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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