EMD4E001G16G2-150CAS2R
ActiveEverspin Technologies Inc.
1GB NON-VOLATILE ST-DDR4 SPIN-TRANSFER TORQUE MRAM
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EMD4E001G16G2-150CAS2R
ActiveEverspin Technologies Inc.
1GB NON-VOLATILE ST-DDR4 SPIN-TRANSFER TORQUE MRAM
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | EMD4E001G16G2-150CAS2R |
|---|---|
| Access Time | 18 ns |
| Clock Frequency | 667 MHz |
| Memory Format | RAM |
| Memory Interface | Parallel |
| Memory Organization | 128 M |
| Memory Size | 1 Mbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-BGA (10x13) |
| Technology | MRAM (Magnetoresistive RAM) |
| Write Cycle Time - Word, Page | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 100.00 | |
Description
General part information
EMD4E001 Series
MRAM (Magnetoresistive RAM) Memory IC 1Gbit Parallel 667 MHz 18 ns 96-BGA (10x13)
Documents
Technical documentation and resources