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MUR4L40H - DO-201

MUR4L40H

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

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DocumentsDatasheet
MUR4L40H - DO-201

MUR4L40H

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMUR4L40H
Capacitance @ Vr, F65 pF
Current - Average Rectified (Io)4 A
Current - Reverse Leakage @ Vr10 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseDO-201AD, Axial
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-201AD
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.28 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
Tape & Reel (TR) 1250$ 0.24
2500$ 0.22
6250$ 0.21
12500$ 0.19
31250$ 0.19

Description

General part information

MUR4L40 Series

Diode 400 V 4A Through Hole DO-201AD

Documents

Technical documentation and resources