DMN3110S-7

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Diodes Inc

TRANS MOSFET N-CH 30V 3.3A 3-PIN SOT-23 T/R

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Diodes Inc

TRANS MOSFET N-CH 30V 3.3A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3110S-7

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	305.8 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	740 mW
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)
Diodes Inc DMN3110S-7	SOT-23-3	740 mW	20 V	N-Channel	-55 °C	150 °C	4.5 V 10 V	Surface Mount	2.5 A	MOSFET (Metal Oxide)	3 V	305.8 pF	SC-59 SOT-23-3 TO-236-3	30 V

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources