ISS55EP06LMXTSA1
ActiveP-CHANNEL SMALL SIGNAL MOSFET -60 V ; SOT-23 PACKAGE; 5,5 OHM
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ISS55EP06LMXTSA1
ActiveP-CHANNEL SMALL SIGNAL MOSFET -60 V ; SOT-23 PACKAGE; 5,5 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISS55EP06LMXTSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.59 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 18 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 400 mW |
| Rds On (Max) @ Id, Vgs | 5.5 Ohm |
| Supplier Device Package | PG-SOT23-3-5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.34 | |
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.10 | |||
| 1000 | $ 0.07 | |||
| Digi-Reel® | 1 | $ 0.34 | ||
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.10 | |||
| 1000 | $ 0.07 | |||
| Tape & Reel (TR) | 3000 | $ 0.06 | ||
| 6000 | $ 0.05 | |||
| 9000 | $ 0.04 | |||
| 30000 | $ 0.04 | |||
| 75000 | $ 0.04 | |||
| 150000 | $ 0.03 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.05 | |
| 6000 | $ 0.04 | |||
| 12000 | $ 0.04 | |||
| 18000 | $ 0.04 | |||
Description
General part information
ISS55EP06 Series
OptiMOS™P-channel 60V MOSFETs in SOT-23 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on)range.
Documents
Technical documentation and resources