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DMP68D1LVQ-13 - Package Image for SOT563

DMP68D1LVQ-13

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP68D1LVQ-13 - Package Image for SOT563

DMP68D1LVQ-13

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP68D1LVQ-13
Configuration2 P-Channel
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs0.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds42 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]500 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs8 Ohm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.08
20000$ 0.08
30000$ 0.07
50000$ 0.07
70000$ 0.07
100000$ 0.07

Description

General part information

DMP68D1LVQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in DC-DC converters and power-management functions.