AUIRFR8401

Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFR8401

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	4.25 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package
Infineon Technologies AUIRFR8401	2200 pF	Surface Mount	4.25 mOhm	79 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 A	20 V	10 V	40 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	63 nC	N-Channel	TO-252AA (DPAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 100A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources