TN2130K1-G
ActiveMOSFET, N-CH, 300V, 0.085A, TO-236AB ROHS COMPLIANT: YES
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TN2130K1-G
ActiveMOSFET, N-CH, 300V, 0.085A, TO-236AB ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2130K1-G | TN2130 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 85 mA | 85 mA |
| Drain to Source Voltage (Vdss) | 300 V | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | 4.5 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF | 50 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 | 6-VDFN Exposed Pad, SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 360 mW | 360 mW |
| Rds On (Max) @ Id, Vgs [Max] | 25 Ohm | 25 Ohm |
| Supplier Device Package | TO-236AB (SOT23) | 6-DFN (2x2), SOT-23-3, TO-236AB (SOT23) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.46 | |
| 25 | $ 0.37 | |||
| 100 | $ 0.35 | |||
| Digi-Reel® | 1 | $ 0.46 | ||
| 25 | $ 0.37 | |||
| 100 | $ 0.35 | |||
| Tape & Reel (TR) | 3000 | $ 0.35 | ||
| Microchip Direct | T/R | 1 | $ 0.46 | |
| 25 | $ 0.37 | |||
| 100 | $ 0.35 | |||
| 1000 | $ 0.33 | |||
| 5000 | $ 0.31 | |||
| 10000 | $ 0.30 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.45 | |
| 10 | $ 0.44 | |||
TN2130 Series
MOSFET, N-Channel Enhancement-Mode, 300V, 25 Ohm
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2130K1-G | |||||||||||||||
Microchip Technology TN2130MF-G-VAO | 4.5 V | 2.4 V | N-Channel | 85 mA | 20 V | -55 °C | 150 °C | 300 V | 50 pF | Surface Mount | 360 mW | 6-VDFN Exposed Pad | 25 Ohm | MOSFET (Metal Oxide) | 6-DFN (2x2) |
Microchip Technology TN2130K1-G-VAO | 4.5 V | 2.4 V | N-Channel | 85 mA | 20 V | -55 °C | 150 °C | 300 V | 50 pF | Surface Mount | 360 mW | SC-59, SOT-23-3, TO-236-3 | 25 Ohm | MOSFET (Metal Oxide) | SOT-23-3 |
Microchip Technology TN2130K1-G | 4.5 V | 2.4 V | N-Channel | 85 mA | 20 V | -55 °C | 150 °C | 300 V | 50 pF | Surface Mount | 360 mW | SC-59, SOT-23-3, TO-236-3 | 25 Ohm | MOSFET (Metal Oxide) | TO-236AB (SOT23) |
Microchip Technology TN2130K1-G |
Description
General part information
TN2130 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources