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DMC3016LNS-13 - Package Image for PowerDI3333-8

DMC3016LNS-13

Active
Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC3016LNS-13 - Package Image for PowerDI3333-8

DMC3016LNS-13

Active
Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMC3016LNS-13
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C6.8 A, 9 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs [Max]9.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1184 pF, 1188 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]1.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]28 mOhm
Rds On (Max) @ Id, Vgs [Min]16 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.25
6000$ 0.23
9000$ 0.22
15000$ 0.21

Description

General part information

DMC3016LDV Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.