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MT29GZ6A6BPIET-53AAT.112

MT29GZ6A6BPIET-53AAT.112

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Micron Technology Inc.

FLASH MEMORY, NAND WITH MOBILE LPDDR, 8 GBIT, 512M X 8BIT, PARALLEL, VFBGA, 149 PINS

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MT29GZ6A6BPIET-53AAT.112

MT29GZ6A6BPIET-53AAT.112

Active
Micron Technology Inc.

FLASH MEMORY, NAND WITH MOBILE LPDDR, 8 GBIT, 512M X 8BIT, PARALLEL, VFBGA, 149 PINS

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Description

General part information

MT29GZ6A6BPIET-53AAT.112

FLASH - NAND (SLC), DRAM - LPDDR4 Memory IC 8Gbit (NAND), 8Gbit (LPDDR4) ONFI 1866 MHz 25 ns 149-VFBGA (8x9.5)

Technical Specifications

Parameters and characteristics for this part

SpecificationMT29GZ6A6BPIET-53AAT.112
Access Time25 ns
Clock Frequency1866 MHz
GradeAutomotive
Memory Depth (Option 1)1 G
Memory Depth (Option 2)512 M
Memory FormatFLASH, RAM
Memory Interface (Type)ONFI
Memory Organization512M x 16 (LPDDR4), 1G x 8 (NAND)
Memory Size1 GB
Memory Size ({type})1 GB
Memory Size (LPDDR4)8 Gbit
Memory Size (NAND)8 Gbit
Memory TypeNAND, LPDDR4, Volatile, Non-Volatile
Memory Width (Option 1)8 bit
Memory Width (Option 2)16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case149-VFBGA
Package Length8 mm
Package Name149-VFBGA
Package Width9.5 mm
QualificationAEC-Q100
TechnologyDRAM - LPDDR4, FLASH - NAND (SLC)
Voltage - Supply (Range 1 Maximum)1.17 V
Voltage - Supply (Range 1 Minimum)1.06 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.7 V
Write Cycle Time - Page30 ns
Write Cycle Time - Word30 ns

Pricing

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CAD

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Documents

Technical documentation and resources

    MT29GZ6A6BPIET-53AAT.112 | Micron Technology Inc. | Zenode.ai