1SS394TE85LF

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SC59

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SC59

Technical Specifications

Parameters and characteristics for this part

Specification	1SS394TE85LF

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-59
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If	500 mV

DIODE SCHOTTKY 10V 100MA SC59

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Operating Temperature - Junction
Toshiba Semiconductor and Storage 1SS394TE85LF	SC-59	10 V	SC-59, SOT-23-3, TO-236-3	Schottky	100 mA	20 µA	Surface Mount	Any Speed	200 mA	500 mV	40 pF	125 °C

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General part information

Diode 10 V 100mA Surface Mount SC-59

Technical documentation and resources