2SB564-AZ

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Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

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2SB564-AZ

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Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2SB564-AZ	2SB564 Series

	-	-
Current - Collector (Ic) (Max) [Max]	50 mA	50 mA
Current - Collector Cutoff (Max) [Max]	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90 hFE	90 hFE
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	3-SSIP	3-SSIP
Power - Max [Max]	1 W	1 W
Transistor Type	PNP	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV	600 mV
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	735	$ 0.41

2SB564 Series

Bipolar Power Transistors

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Renesas Electronics Corporation 2SB564-T-AZ
Renesas Electronics Corporation 2SB564-AZ	Through Hole	25 V	PNP	100 nA	3-SSIP	600 mV	90 hFE	-55 °C	150 °C	1 W	50 mA

Description

General part information

2SB564 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

No documents available