
CY10E422L-7DC
ActiveInfineon Technologies
IC SRAM 1KBIT PARALLEL 24SBDIP
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CY10E422L-7DC
ActiveInfineon Technologies
IC SRAM 1KBIT PARALLEL 24SBDIP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CY10E422L-7DC |
|---|---|
| Access Time | 7 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 x 4 |
| Memory Size | 128 B |
| Memory Type | Volatile |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 70 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 10.16 mm |
| Package / Case | 24-CDIP |
| Package / Case | 10.16 mm |
| Supplier Device Package | 24-SBDIP |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 5.46 V |
| Voltage - Supply [Min] | 4.94 V |
| Write Cycle Time - Word, Page | 7 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 18 | $ 17.19 | |
Description
General part information
CY10E422 Series
SRAM - Asynchronous Memory IC 1Kbit Parallel 7 ns 24-SBDIP
Documents
Technical documentation and resources
No documents available