NSS35200MR6T1G
ObsoleteON Semiconductor
LOW VCE(SAT) TRANSISTOR, PNP, 35 V, 2.0 A
NSS35200MR6T1G
ObsoleteON Semiconductor
LOW VCE(SAT) TRANSISTOR, PNP, 35 V, 2.0 A
Description
General part information
NSS35200MR6T1G
Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSS35200MR6T1G |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | 6-TSOP |
| Power - Max | 625 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 310 mV |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
Pricing
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