Technical Specifications
Parameters and characteristics for this part
| Specification | BSS123TA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 170 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 360 mW |
| Rds On (Max) @ Id, Vgs [Max] | 6 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
BSS123Q Series
N-Channel Enhancement Mode MOSFET
| Part | Technology | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | 500 mW | 38 pF | 1.3 nC | 2 V | Surface Mount | N-Channel | 6 Ohm | 4.5 V 10 V | 230 mA | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 20 V | 100 V | ||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | 300 mW | 60 pF | 2 V | Surface Mount | N-Channel | 6 Ohm | 10 V | 170 mA | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 20 V | 100 V | |||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-323 | 60 pF | 2 V | Surface Mount | N-Channel | 6 Ohm | 4.5 V 10 V | 170 mA | SC-70 SOT-323 | -55 °C | 150 °C | 20 V | 100 V | 200 mW | |||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | 20 pF | 2 V | Surface Mount | N-Channel | 4.5 V 10 V | 170 mA | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 20 V | 100 V | 360 mW | 6 Ohm | |||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | 300 mW | 60 pF | 2 V | Surface Mount | N-Channel | 6 Ohm | 4.5 V 10 V | 170 mA | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 20 V | 100 V | Automotive | AEC-Q101 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.46 | |
| 10 | $ 0.33 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.15 | |||
| 1000 | $ 0.11 | |||
| Digi-Reel® | 1 | $ 0.46 | ||
| 10 | $ 0.33 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.15 | |||
| 1000 | $ 0.11 | |||
| Tape & Reel (TR) | 3000 | $ 0.10 | ||
| 6000 | $ 0.10 | |||
| 9000 | $ 0.09 | |||
| 30000 | $ 0.09 | |||
| 75000 | $ 0.07 | |||
Description
General part information
BSS123Q Series
These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.
Documents
Technical documentation and resources