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DMN2022UFDF-7 - U-DFN2020-6 Type F

DMN2022UFDF-7

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Diodes Inc

MOSFET N-CH 20V 7.9A 6UDFN

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DMN2022UFDF-7 - U-DFN2020-6 Type F

DMN2022UFDF-7

Active
Diodes Inc

MOSFET N-CH 20V 7.9A 6UDFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2022UFDF-7
Current - Continuous Drain (Id) @ 25°C7.9 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC
Input Capacitance (Ciss) (Max) @ Vds907 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)660 mW
Rds On (Max) @ Id, Vgs22 mOhm
Supplier Device PackageU-DFN2020-6 (Type F)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
Digi-Reel® 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
Tape & Reel (TR) 3000$ 0.10

Description

General part information

DMN2022UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.