NSTB1002DXV5T1G
ActiveBIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, NPN AND PNP COMPLEMENT, 40 V, 40 V, 100 MA
NSTB1002DXV5T1G
ActiveBIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, NPN AND PNP COMPLEMENT, 40 V, 40 V, 100 MA
Description
General part information
NSTB1002DXV5T1G
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the NSTB1002DXV5T1 series, two complementary devices are housed in the SOT¿553 package which is ideal for low power surface mount applications where board space is at a premium.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSTB1002DXV5T1G |
|---|---|
| Current - Collector (Ic) (Alternate) | 0.2 A |
| Current - Collector (Ic) (Max) | 0.1 A |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 80, 100 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| NPN Count | 1 |
| Package / Case | SOT-553 |
| Package Name | SOT-553 |
| PNP Count | 1 |
| Power - Max | 0.5 W |
| Resistor - Base (R1) Resistance | 47 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhm |
| Transistor Configuration | Pre-Biased |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) | 400 mV, 250 mV |
| Voltage - Collector Emitter Breakdown (Max) (Value 1) | 50 V |
| Voltage - Collector Emitter Breakdown (Max) (Value 2) | 40 V |
Pricing
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