STU11NM60ND

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STMicroelectronics

MOSFET N-CH 600V 10A IPAK

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STMicroelectronics

MOSFET N-CH 600V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU11NM60ND

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	90 W
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 600V 10A IPAK

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Technology	Operating Temperature	Vgs (Max)	Package / Case	Power Dissipation (Max)
STMicroelectronics STU11NM60ND	10 A	600 V	5 V	30 nC	10 V	Through Hole	850 pF	IPAK	N-Channel	MOSFET (Metal Oxide)	150 °C	25 V	IPAK, TO-251-3 Short Leads, TO-251AA	90 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole IPAK

Technical documentation and resources