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DMG2302UKQ-13 - SOT-23-3

DMG2302UKQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMG2302UKQ-13 - SOT-23-3

DMG2302UKQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG2302UKQ-13
Current - Continuous Drain (Id) @ 25°C2.8 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds130 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)660 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.27
100$ 0.17
500$ 0.13
1000$ 0.12
2000$ 0.10
5000$ 0.09
Digi-Reel® 1$ 0.45
10$ 0.27
100$ 0.17
500$ 0.13
1000$ 0.12
2000$ 0.10
5000$ 0.09
Tape & Reel (TR) 10000$ 0.08
20000$ 0.08
30000$ 0.07
50000$ 0.07
70000$ 0.07

Description

General part information

DMG2302UKQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(on)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.