UF4004-G

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Comchip Technology

DIODE GEN PURP 300V 1A DO41

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Comchip Technology

DIODE GEN PURP 300V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4004-G

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

DIODE GEN PURP 300V 1A DO41

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Package / Case	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Comchip Technology UF4004-G	1.3 V	300 V	50 ns	5 µA	Standard	Axial, DO-204AL, DO-41	200 mA, 500 ns	1 A	20 pF	Through Hole	150 °C	-55 °C	DO-41

General part information

Diode 300 V 1A Through Hole DO-41

Technical documentation and resources