IRF7750TR

Obsolete

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

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Obsolete

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7750TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Mounting Type	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [custom]	Package / Case [custom]	FET Feature	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package
Infineon Technologies IRF7750TRPBF	Surface Mount	1 W	MOSFET (Metal Oxide)	4.7 A	1700 pF	8-TSSOP	0.173 "	4.4 mm	Logic Level Gate	1.2 V	-55 °C	150 °C	2 P-Channel	20 V	39 nC	30 mOhm	8-TSSOP
Infineon Technologies IRF7750TR	Surface Mount	1 W	MOSFET (Metal Oxide)	4.7 A	1700 pF	8-TSSOP	0.173 "	4.4 mm	Logic Level Gate	1.2 V	-55 °C	150 °C	2 P-Channel	20 V	39 nC	30 mOhm	8-TSSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.7A 1W Surface Mount 8-TSSOP

Technical documentation and resources