IRFR7746TRPBF

Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 11.2 MOHM;

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Obsolete

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 11.2 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR7746TRPBF

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds	3107 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	99 W
Rds On (Max) @ Id, Vgs	11.2 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRFR7746TRPBF	11.2 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	PG-TO252-3	99 W	N-Channel	75 V	56 A	89 nC	3.7 V	20 V	3107 pF	6 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$