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NTBGS001N06C

NTBGS001N06C

Obsolete
ON Semiconductor

POWER MOSFET, 60 V, 1.1 MΩ, 342 A, SINGLE N−CHANNEL, D2PAK7

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NTBGS001N06C

NTBGS001N06C

Obsolete
ON Semiconductor

POWER MOSFET, 60 V, 1.1 MΩ, 342 A, SINGLE N−CHANNEL, D2PAK7

Find alt

Description

General part information

NTBGS001N06C

Power MOSFET, 60 V, 1.1 mΩ, 342 A, Single N−Channel, D2PAK7

Technical Specifications

Parameters and characteristics for this part

SpecificationNTBGS001N06C
Current - Continuous Drain (Id) (Ta)42 A, 42 A
Current - Continuous Drain (Id) (Tc)342 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)12 V
FET TypeN-Channel
Gate Charge (Max)139 nC
Input Capacitance (Ciss) (Max)11110 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads6 Leads
Package NameTO-263-7, D2PAK, TO-263 (D2PAK)
Power Dissipation (Max)3.7 W, 245 W
Rds On (Max)1.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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