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NVMYS007N10MCLTWG

NVMYS007N10MCLTWG

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ON Semiconductor

MOSFET – POWER, SINGLE N-CHANNEL 100 V, 7 MΩ, 83 A

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NVMYS007N10MCLTWG

NVMYS007N10MCLTWG

Active
ON Semiconductor

MOSFET – POWER, SINGLE N-CHANNEL 100 V, 7 MΩ, 83 A

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Description

General part information

NVMYS007N10MCLTWG

MOSFET – Power, SingleN-Channel100 V, 7 mΩ, 83 A

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS007N10MCLTWG
Current - Continuous Drain (Id) (Ta)16 A
Current - Continuous Drain (Id) (Tc)83 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)37 nC, 37 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package Length5 mm
Package NameLFPAK4
Package Width6 mm
Power Dissipation (Max)3.8 W, 107 W
QualificationAEC-Q101
Rds On (Max)7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part

    NVMYS007N10MCLTWG | ON Semiconductor | Zenode.ai