
TC4432CPA
ActiveMOSFET DRVR 1.5A 1-OUT HI SIDE NON-INV 8-PIN PDIP TUBE
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TC4432CPA
ActiveMOSFET DRVR 1.5A 1-OUT HI SIDE NON-INV 8-PIN PDIP TUBE
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Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | TC4432CPA | TC4432 Series |
---|---|---|
Channel Type | - | Single |
Current - Peak Output (Source, Sink) | - | 1.5 A |
Driven Configuration | - | High-Side, Low-Side |
Gate Type | - | N-Channel, P-Channel MOSFET |
Input Type | - | Non-Inverting |
Mounting Type | - | Surface Mount, Through Hole |
null | - | |
Number of Drivers | - | 1 |
Operating Temperature | - | -40 - 0 °C |
Operating Temperature | - | 150 °C |
Package / Case | - | 8-SOIC, 8-CDIP, 8-DIP |
Package / Case | - | 3.9 mm |
Package / Case | - | 0.154 in |
Package / Case | - | 7.62 mm |
Package / Case | - | 0.3 in |
Rise / Fall Time (Typ) | - | 25 ns |
Rise / Fall Time (Typ) | - | 33 ns |
Supplier Device Package | - | 8-SOIC, 8-CERDIP, 8-PDIP |
Voltage - Supply | - | 4.5 V |
Voltage - Supply | - | 30 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Tube | 1 | $ 3.96 | |
25 | $ 3.29 | |||
100 | $ 3.01 | |||
Microchip Direct | TUBE | 1 | $ 3.96 | |
25 | $ 3.29 | |||
100 | $ 3.01 | |||
1000 | $ 2.51 | |||
5000 | $ 2.30 | |||
10000 | $ 2.14 |
TC4432 Series
1.5 A MOSFET Gate Driver
Part | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Driven Configuration | Input Type | Supplier Device Package | Current - Peak Output (Source, Sink) | Channel Type | Mounting Type | Number of Drivers | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TC4432COA | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-SOIC | 1.5 A, 1.5 A | Single | Surface Mount | 1 | 8-SOIC | 3.9 mm | 0.154 in | 0 °C | 150 °C | 4.5 V | 30 VDC | ||
Microchip Technology TC4432EJA | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-CERDIP | 1.5 A, 1.5 A | Single | Through Hole | 1 | 8-CDIP | -40 °C | 150 °C | 4.5 V | 30 VDC | 7.62 mm | 0.3 in | ||
Microchip Technology TC4432VOA | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-SOIC | 1.5 A, 1.5 A | Single | Surface Mount | 1 | 8-SOIC | 3.9 mm | 0.154 in | -40 °C | 150 °C | 4.5 V | 30 VDC | ||
Microchip Technology TC4432CPA | |||||||||||||||||||
Microchip Technology TC4432EPA | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-PDIP | 1.5 A, 1.5 A | Single | Through Hole | 1 | 8-DIP | -40 °C | 150 °C | 4.5 V | 30 VDC | 7.62 mm | 0.3 in | ||
Microchip Technology TC4432EOA713 | |||||||||||||||||||
Microchip Technology TC4432EPA | |||||||||||||||||||
Microchip Technology TC4432EOA713 | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-SOIC | 1.5 A, 1.5 A | Single | Surface Mount | 1 | 8-SOIC | 3.9 mm | 0.154 in | -40 °C | 150 °C | 4.5 V | 30 VDC | ||
Microchip Technology TC4432CPA | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-PDIP | 1.5 A, 1.5 A | Single | Through Hole | 1 | 8-DIP | 0 °C | 150 °C | 4.5 V | 30 VDC | 7.62 mm | 0.3 in | ||
Microchip Technology TC4432VOA713 | N-Channel, P-Channel MOSFET | 25 ns | 33 ns | High-Side, Low-Side | Non-Inverting | 8-SOIC | 1.5 A, 1.5 A | Single | Surface Mount | 1 | 8-SOIC | 3.9 mm | 0.154 in | -40 °C | 150 °C | 4.5 V | 30 VDC |
Description
General part information
TC4432 Series
The TC4431/4432 are 30 V CMOS buffer/gate drivers suitable for use in high-side gate driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7 V. For operation in lower voltages, disable the lockout and start-up circuit by grounding pin 3(LOCK DIS); for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETs.
Documents
Technical documentation and resources