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IRFI1310NPBF - ROHM BAJ5CC0T

IRFI1310NPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 36 MOHM;

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IRFI1310NPBF - ROHM BAJ5CC0T

IRFI1310NPBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 36 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFI1310NPBF
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds1900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]56 W
Rds On (Max) @ Id, Vgs36 mOhm
Supplier Device PackageTO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.57
10$ 1.66
100$ 1.14
500$ 0.91
1000$ 0.84
2000$ 0.78
5000$ 0.76

Description

General part information

IRFI1310 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources