NTMFSC4D2N10MC
ActiveN-CHANNEL DUAL COOL<SUP>TM </SUP> 56 POWERTRENCH<SUP>®</SUP> MOSFET 100V, ___A, 4.2MΩ
NTMFSC4D2N10MC
ActiveN-CHANNEL DUAL COOL<SUP>TM </SUP> 56 POWERTRENCH<SUP>®</SUP> MOSFET 100V, ___A, 4.2MΩ
Description
General part information
NTMFSC4D2N10MC
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMFSC4D2N10MC |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 29.6 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Input Capacitance (Ciss) (Max) | 2856 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-DFN |
| Package Width | 6.15 mm |
| Power Dissipation (Max) | 122 W, 7.9 W |
| Rds On (Max) | 4.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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