1SS397TE85LF

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

Technical Specifications

Parameters and characteristics for this part

Specification	1SS397TE85LF

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-70, SOT-323
Reverse Recovery Time (trr)	500 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-70
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

DIODE GEN PURP 400V 100MA SC70

Part	Mounting Type	Speed	Speed	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction	Capacitance @ Vr, F	Supplier Device Package
Toshiba Semiconductor and Storage 1SS397TE85LF	Surface Mount	Any Speed	200 mA	Standard	100 mA	1 µA	400 V	SC-70, SOT-323	1.3 V	500 ns	125 °C	5 pF	SC-70

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 100mA Surface Mount SC-70

Technical documentation and resources